TK31E60W Silicon N-Channel MOSFET

Toshiba

Description

MOSFETs Silicon N-Channel MOS (DTMOS) TK31E60W 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TK31E60W
Manufacturer: Toshiba ↗
File Size: 258.28 KB
Datasheet: TK31E60W-Toshiba.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31E60W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4

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TK31E60W Silicon N-Channel MOSFET Toshiba

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