Datasheet4U Logo Datasheet4U.com

TK31E60W

Silicon N-Channel MOSFET

TK31E60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31E60W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4

TK31E60W Datasheet (258.28 KB)

Preview of TK31E60W PDF

Datasheet Details

Part number:

TK31E60W

Manufacturer:

Toshiba ↗

File Size:

258.28 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TK31E60W N-Channel MOSFET (INCHANGE)

TK31E60X Silicon N-Channel MOSFET (Toshiba)

TK31A60W Silicon N-Channel MOSFET (Toshiba)

TK31A60W N-Channel MOSFET (INCHANGE)

TK31J60W Silicon N-Channel MOSFET (Toshiba)

TK31J60W N-Channel MOSFET (INCHANGE)

TK31J60W5 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK31J60W5 N-Channel MOSFET (INCHANGE)

TK31N60W Silicon N-Channel MOSFET (Toshiba)

TK31N60W N-Channel MOSFET (INCHANGE)

TAGS

TK31E60W Silicon N-Channel MOSFET Toshiba

Image Gallery

TK31E60W Datasheet Preview Page 2 TK31E60W Datasheet Preview Page 3

TK31E60W Distributor