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TK31E60W - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK31E60W
Manufacturer	Toshiba ↗
File Size	258.28 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK31E60W-Toshiba.pdf

TK31E60W Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31E60W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power.

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Published: Jul 3, 2014 |