TK31E60W Datasheet, MOSFET, Toshiba

TK31E60W Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS

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Part number:

TK31E60W

Manufacturer:

Toshiba ↗

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258.28kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK31E60W Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Juncti

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TK31E60W

Toshiba

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