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TK31E60X Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31E60X 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number
TK31E60X
Manufacturer
Toshiba ↗
File Size
251.65 KB
Datasheet
TK31E60X-Toshiba.pdf
Description
Silicon N-Channel MOSFET

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31E60X 1: Gate 2: Drain (Heats

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