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TK31E60X Datasheet - Toshiba

TK31E60X Silicon N-Channel MOSFET

TK31E60X Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31E60X 1: Gate 2: Drain (Heats

TK31E60X-Toshiba.pdf

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Datasheet Details

Part number:

TK31E60X

Manufacturer:

Toshiba ↗

File Size:

251.65 KB

Description:

Silicon n-channel mosfet.

TK31E60X Distributor

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TK31E60X TK31E60X Silicon N-Channel MOSFET Toshiba