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TK31N60X

Silicon N-Channel MOSFET

TK31N60X Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31N60X 1: Gate 2: Drain (Heats

TK31N60X Datasheet (249.38 KB)

Preview of TK31N60X PDF

Datasheet Details

Part number:

TK31N60X

Manufacturer:

Toshiba ↗

File Size:

249.38 KB

Description:

Silicon n-channel mosfet.

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TK31N60X Silicon N-Channel MOSFET Toshiba

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