Part number:
TK39N60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
244.53 KB
Description:
Silicon n-channel mosfet.
* (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39N60W 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4
TK39N60W Datasheet (244.53 KB)
TK39N60W
Toshiba ↗ Semiconductor
244.53 KB
Silicon n-channel mosfet.
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