Datasheet4U Logo Datasheet4U.com

TK39N60W

Silicon N-Channel MOSFET

TK39N60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39N60W 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4

TK39N60W Datasheet (244.53 KB)

Preview of TK39N60W PDF

Datasheet Details

Part number:

TK39N60W

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

244.53 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TK39N60W N-Channel MOSFET (INCHANGE)

TK39N60W5 Silicon N-Channel MOSFET (Toshiba Semiconductor)

TK39N60W5 N-Channel MOSFET (INCHANGE)

TK39N60X Silicon N-Channel MOSFET (Toshiba)

TK39N60X N-Channel MOSFET (INCHANGE)

TK3904LLD03 Plastic-Encapsulate Transistors (WILLAS)

TK3904NND03 Plastic-Encapsulate Transistors (WILLAS)

TK3906LLD03 Plastic-Encapsulate Transistors (WILLAS)

TK3906NND03 Plastic-Encapsulate Transistors (WILLAS)

TK39A60W Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

TK39N60W Silicon N-Channel MOSFET Toshiba Semiconductor

Image Gallery

TK39N60W Datasheet Preview Page 2 TK39N60W Datasheet Preview Page 3

TK39N60W Distributor