TK39N60W Datasheet, Mosfet, Toshiba Semiconductor

TK39N60W Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS

PDF File Details

Part number:

TK39N60W

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

244.53kb

Download:

📄 Datasheet

Description:

Silicon n-channel mosfet.

TK39N60W Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Juncti

TAGS

TK39N60W

Toshiba Semiconductor

📁 Related Datasheet

TK39N60W - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low gate input resistance ·100% avalanche tested ·.

TK39N60W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK39N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse r.

TK39N60W5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor TK39N60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.074Ω. ·Enhancement mode: Vth =3 to4.5V (VDS = 10 V, .

TK39N60X - Silicon N-Channel MOSFET (Toshiba)
MOSFETs Silicon N-Channel MOS (DTMOS-H) TK39N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(O.

TK39N60X - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor TK39N60X ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.065Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V.

TK3904LLD03 - Plastic-Encapsulate Transistors (WILLAS)
FM120-M TK3904LLD03 THRU WBFBP-03D Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE.

TK3904NND03 - Plastic-Encapsulate Transistors (WILLAS)
FM120-M THRU TK3904NND03 WBFBP-03B Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE.

TK3906LLD03 - Plastic-Encapsulate Transistors (WILLAS)
FM120-M THRU TK3906LLD03 WBFBP-03D Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE.

TK3906NND03 - Plastic-Encapsulate Transistors (WILLAS)
FM120-M TK390 11D03 THRU WBFBP-03B Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE.

TK39A60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
MOSFETs Silicon N-Channel MOS (DTMOS) TK39A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON).