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TK39Z60X

Silicon N-Channel MOSFET

TK39Z60X Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39Z60X TO-247-4L(T) 1. Drain (

TK39Z60X Datasheet (278.30 KB)

Preview of TK39Z60X PDF

Datasheet Details

Part number:

TK39Z60X

Manufacturer:

Toshiba ↗

File Size:

278.30 KB

Description:

Silicon n-channel mosfet.

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TK39Z60X Silicon N-Channel MOSFET Toshiba

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