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TK6A80E - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	TK6A80E
Manufacturer	INCHANGE
File Size	235.60 KB
Description	N-Channel MOSFET
Datasheet	TK6A80E-INCHANGE.pdf

TK6A80E Product details

Features

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Low drain-source on-resistance: RDS(on) ≤1.7Ω.
Enhancement mode: Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.6mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 4, 2020 |