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TK6A80E Datasheet - INCHANGE

TK6A80E N-Channel MOSFET

TK6A80E Features

* Low drain-source on-resistance: RDS(on) ≤1.7Ω.

* Enhancement mode: Vth = 2.5 to 4.0V (VDS = 10 V, ID=0.6mA)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRITION

* Switching Voltage Regulators

* ABSOLUTE MAX

TK6A80E-INCHANGE.pdf

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Datasheet Details

Part number:

TK6A80E

Manufacturer:

INCHANGE

File Size:

235.60 KB

Description:

N-channel mosfet.

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TK6A80E TK6A80E N-Channel MOSFET INCHANGE

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