TK6A60W - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK6A60W
Manufacturer	Toshiba Semiconductor
File Size	237.48 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK6A60W-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energ.

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Published: Sep 19, 2014 |