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TK60F10N1L - Silicon N-channel MOSFET

TK60F10N1L Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK60F10N1L 1.Applications * Automotive * Switching Voltage Regulators * DC-DC Conver.

TK60F10N1L Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60F10N1L TO-220SM(W) 1: Gate 2: Drain (

TK60F10N1L Applications

* Automotive
* Switching Voltage Regulators
* DC-DC Converters

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Silicon N-channel MOSFET Toshiba
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