Datasheet Specifications
- Part number
- TK60F10N1L
- Manufacturer
- Toshiba ↗
- File Size
- 726.20 KB
- Datasheet
- TK60F10N1L-Toshiba.pdf
- Description
- Silicon N-channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK60F10N1L 1.Applications * Automotive * Switching Voltage Regulators * DC-DC Conver.
Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60F10N1L TO-220SM(W) 1: Gate 2: Drain (Applications
* AutomotiveTK60F10N1L Distributors
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