Datasheet Specifications
- Part number
- TK60P03M1
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 230.72 KB
- Datasheet
- TK60P03M1-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TK60P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK60P03M1 1.Applications * * DC-DC Converters Desktop Computers 2..
Features
* (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1:TK60P03M1 Distributors
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