Part number:
TK60P03M1
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
230.72 KB
Description:
Mosfets.
TK60P03M1 Datasheet (230.72 KB)
* (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 13 nC (typ.) Low drain-source on-resistance: RDS(ON) = 4.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1:
TK60P03M1 Datasheet (230.72 KB)
TK60P03M1
Toshiba ↗ Semiconductor
230.72 KB
Mosfets.
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