Datasheet Details
- Part number
- TK60S06K3L
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 244.40 KB
- Datasheet
- TK60S06K3L-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
TK60S06K3L Description
MOSFETs Silicon N-channel MOS (U-MOS) TK60S06K3L 1.Applications * Automotive * Motor Drivers * DC-DC Converters * Sw.
TK60S06K3L Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK60S06K3L
DPAK+
1: Gate 2: Drain (heatsink)
TK60S06K3L Applications
* Automotive
* Motor Drivers
* DC-DC Converters
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