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TK60S06K3L Datasheet - Toshiba Semiconductor

TK60S06K3L Silicon N-Channel MOSFET

TK60S06K3L Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK60S06K3L DPAK+ 1: Gate 2: Drain (heatsink)

TK60S06K3L-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK60S06K3L

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

244.40 KB

Description:

Silicon n-channel mosfet.

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TK60S06K3L TK60S06K3L Silicon N-Channel MOSFET Toshiba Semiconductor

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