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TK60S10N1L Datasheet - Toshiba

TK60S10N1L Silicon N-channel MOSFET

TK60S10N1L Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source

TK60S10N1L-Toshiba.pdf

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Datasheet Details

Part number:

TK60S10N1L

Manufacturer:

Toshiba ↗

File Size:

646.77 KB

Description:

Silicon n-channel mosfet.

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