TK60S10N1L Silicon N-channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK60S10N1L 1.Applications * Automotive * Motor Drivers * Switching Voltage Regulator.

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Datasheet Specifications

Part number: TK60S10N1L
Manufacturer: Toshiba ↗
File Size: 646.77 KB
Datasheet: TK60S10N1L-Toshiba.pdf
Description: Silicon N-channel MOSFET

Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source

Applications

* Automotive
* Motor Drivers
* Switching Voltage Regulators

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TK60S10N1L Silicon N-channel MOSFET Toshiba

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