TK60S10N1L Datasheet, Mosfet, Toshiba

TK60S10N1L Features

• Mosfet (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (V

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Part number:

TK60S10N1L

Manufacturer:

Toshiba ↗

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646.77kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

TK60S10N1L Application

• Applications
• Automotive
• Motor Drivers
• Switching Voltage Regulators
• DC-DC Converters 2. Features (1) AEC-Q101

TAGS

TK60S10N1L

Toshiba

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