* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.14 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK60S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source
TK60S10N1L Datasheet (646.77 KB)
TK60S10N1L
646.77 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK60S10N1L
1. Applications
* Automotive
* Motor Drivers
* Switching Voltage Regulator.
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