TK60F08K3 - MOSFETs

Toshiba Semiconductor

Datasheet Details

Part number	TK60F08K3
Manufacturer	Toshiba ↗ Semiconductor
File Size	277.59 KB
Description	MOSFETs
Datasheet	TK60F08K3-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche ener.

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Published: Sep 5, 2014 |