Datasheet Specifications
- Part number
- TK60F08K3
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 277.59 KB
- Datasheet
- TK60F08K3-ToshibaSemiconductor.pdf
- Description
- MOSFETs
Description
TK60F08K3 MOSFETs Silicon N-channel MOS (U-MOS) TK60F08K3 1.Applications * * * * Automotive Switching Voltage Regul.
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute MaximTK60F08K3 Distributors
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