* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maxim
TK60F08K3 Datasheet (277.59 KB)
TK60F08K3
Toshiba ↗ Semiconductor
277.59 KB
Mosfets.
TK60F08K3
MOSFETs Silicon N-channel MOS (U-MOS)
TK60F08K3
1. Applications
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* Automotive Switching Voltage Regul.
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