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TK6A80E Datasheet - Toshiba

TK6A80E N-Channel MOSFET

TK6A80E Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK6A80E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production

TK6A80E-Toshiba.pdf

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Datasheet Details

Part number:

TK6A80E

Manufacturer:

Toshiba ↗

File Size:

270.66 KB

Description:

N-channel mosfet.

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TK6A80E TK6A80E N-Channel MOSFET Toshiba

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