Datasheet4U Logo Datasheet4U.com

TK8R2A06PL N-Channel MOSFET

TK8R2A06PL Description

iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK8R2A06PL，ITK8R2A06PL *.

TK8R2A06PL Features

* Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V)
* Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators

TK8R2A06PL Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

📥 Download Datasheet

Preview of TK8R2A06PL PDF
datasheet Preview Page 2

Datasheet Details

Part number
TK8R2A06PL
Manufacturer
INCHANGE
File Size
253.17 KB
Datasheet
TK8R2A06PL-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • TK8R2E06PL - Silicon N-channel MOSFET (Toshiba)
  • TK8011 - 1 key touch detector (Tenx)
  • TK8012 - 2 key touch detector (Tenx)
  • TK8021 - 1 key touch detector (Tenx)
  • TK8022 - 2 key touch detector (Tenx)
  • TK8023 - 3 key touch detector (Tenx)
  • TK80A04K3L - MOSFETs (Toshiba Semiconductor)
  • TK80A08K3 - Field Effect Transistor (Toshiba Semiconductor)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE TK8R2A06PL-like datasheet