* (1) High-speed switching (2) Small gate charge: QSW = 9.7 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID
TK8R2E06PL Datasheet (575.25 KB)
TK8R2E06PL
575.25 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS
*-H)
TK8R2E06PL
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulat.
📁 Related Datasheet
TK8R2E06PL - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK8R2E06PL，ITK8R2E06PL
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤8.2mΩ. (VGS = 10 V.
TK8R2A06PL - Silicon N-channel MOSFET
(Toshiba)
MOSFETs Silicon N-channel MOS (U-MOS�-H)
TK8R2A06PL
1. Applications
• High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers
.
TK8R2A06PL - N-Channel MOSFET
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iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK8R2A06PL，ITK8R2A06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 8.2mΩ (VGS = 10 V).
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tenx reserves the right to change or discontinue the manual and online documentation to this product herein to improve reli.
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tenx reserves the right to change or discontinue the manual and online documentation to this product herein to improve reli.
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tenx reserves the right to change or discontinue the manual and online documentation to this product herein to improve reli.
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tenx reserves the right to change or discontinue the manual and online documentation to this product herein to improve reli.
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tenx reserves the right to change or discontinue the manual and online documentation to this product herein to improve reli.
