Datasheet4U Logo Datasheet4U.com

TK80E08K3 Datasheet - Toshiba

TK80E08K3 N-Channel MOSFET

Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain source voltage Drain gate voltage (RGS.

TK80E08K3-Toshiba.pdf

Preview of TK80E08K3 PDF
TK80E08K3 Datasheet Preview Page 2 TK80E08K3 Datasheet Preview Page 3

Datasheet Details

Part number:

TK80E08K3

Manufacturer:

Toshiba ↗

File Size:

257.84 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TK80E06K3A Silicon N-channel MOS (Toshiba)

TK80E07NE Silicon N Channel MOS Type Field Effect Transistor (Toshiba)

TK8011 1 key touch detector (Tenx)

TK8012 2 key touch detector (Tenx)

TK8021 1 key touch detector (Tenx)

TK8022 2 key touch detector (Tenx)

TK8023 3 key touch detector (Tenx)

TK80A04K3L MOSFETs (Toshiba Semiconductor)

TAGS

TK80E08K3 TK80E08K3 N-Channel MOSFET Toshiba

TK80E08K3 Distributor