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TK80F08K3 Datasheet - Toshiba

TK80F08K3 Silicon N-Channel MOSFET

TK80F08K3 Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK80F08K3 TO-220SM(W) 1: Gate 2: Drain (Heats

TK80F08K3_Toshiba.pdf

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Datasheet Details

Part number:

TK80F08K3

Manufacturer:

Toshiba ↗

File Size:

367.23 KB

Description:

Silicon n-channel mosfet.

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TK80F08K3 TK80F08K3 Silicon N-Channel MOSFET Toshiba

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