TK80E07NE - Silicon N Channel MOS Type Field Effect Transistor

Datasheet Details

Part number	TK80E07NE
Manufacturer	Toshiba Electronic Devices & Storage
File Size	288.28 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	TK80E07NE Datasheet
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TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.

Published: Jan 6, 2017 |