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TK80E07NE Datasheet - Toshiba

TK80E07NE Silicon N Channel MOS Type Field Effect Transistor

TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltag.

TK80E07NE-Toshiba.pdf

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Datasheet Details

Part number:

TK80E07NE

Manufacturer:

Toshiba ↗

File Size:

288.28 KB

Description:

Silicon n channel mos type field effect transistor.

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TK80E07NE TK80E07NE Silicon Channel MOS Type Field Effect Transistor Toshiba