TK80F06K3L Silicon N-channel MOS

Toshiba

Description

TK80F06K3L MOSFETs Silicon N-channel MOS (U-MOS) TK80F06K3L 1.Applications * * * * Automotive Switching Voltage Reg.

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Datasheet Specifications

Part number: TK80F06K3L
Manufacturer: Toshiba ↗
File Size: 311.35 KB
Datasheet: TK80F06K3L_Toshiba.pdf
Description: Silicon N-channel MOS

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maxim

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TK80F06K3L Silicon N-channel MOS Toshiba

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