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TK80F06K3L Datasheet - Toshiba

TK80F06K3L Silicon N-channel MOS

TK80F06K3L Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maxim

TK80F06K3L_Toshiba.pdf

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Datasheet Details

Part number:

TK80F06K3L

Manufacturer:

Toshiba ↗

File Size:

311.35 KB

Description:

Silicon n-channel mos.

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TK80F06K3L TK80F06K3L Silicon N-channel MOS Toshiba

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