Datasheet Details
Part number:
TK80F04K3L
Manufacturer:
File Size:
306.89 KB
Description:
Silicon N-channel MOS
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maxim