Datasheet Details
Part number:
TK80S06K3L
Manufacturer:
File Size:
264.08 KB
Description:
Silicon N-Channel MOSFET
Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK80S06K3L DPAK+ 1: Gate 2: Drain (heatsink)
