TK80E06K3A Datasheet, Mos, Toshiba

TK80E06K3A Features

• Mos (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3.

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Part number:

TK80E06K3A

Manufacturer:

Toshiba ↗

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262.70kb

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📄 Datasheet

Description:

Silicon n-channel mos.

TK80E06K3A Application

• Applications
• Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage cur

TAGS

TK80E06K3A

Toshiba

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