Part number:
TK80E06K3A
Manufacturer:
File Size:
262.70 KB
Description:
Silicon n-channel mos.
TK80E06K3A Datasheet (262.70 KB)
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note)
TK80E06K3A Datasheet (262.70 KB)
TK80E06K3A
262.70 KB
Silicon n-channel mos.
📁 Related Datasheet
TK80E07NE Silicon N Channel MOS Type Field Effect Transistor (Toshiba)
TK80E08K3 N-Channel MOSFET (Toshiba)
TK8011 1 key touch detector (Tenx)
TK8012 2 key touch detector (Tenx)
TK8021 1 key touch detector (Tenx)
TK8022 2 key touch detector (Tenx)
TK8023 3 key touch detector (Tenx)
TK80A04K3L MOSFETs (Toshiba Semiconductor)
TK80A04K3L N-Channel MOSFET (INCHANGE)
TK80A08K3 Field Effect Transistor (Toshiba Semiconductor)
