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TK80E06K3A Datasheet - Toshiba

TK80E06K3A Silicon N-channel MOS

TK80E06K3A Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note)

TK80E06K3A_Toshiba.pdf

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Datasheet Details

Part number:

TK80E06K3A

Manufacturer:

Toshiba ↗

File Size:

262.70 KB

Description:

Silicon n-channel mos.

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TK80E06K3A TK80E06K3A Silicon N-channel MOS Toshiba

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