TK80D08K3 Datasheet (Toshiba Semiconductor) - Switching Regulator Applications

TK80D08K3, Switching Regulator Applications

TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80D08K3 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0±0.3 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 Unit: mm 3.2 2.8 1.1±0.15 2.8Max.

9.0 15.0±0.3 0.75±0.25 12.