Datasheet4U Logo Datasheet4U.com

TK80D08K3 Datasheet - Toshiba Semiconductor

TK80D08K3 Switching Regulator Applications

TK80D08K3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80D08K3 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0±0.3 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 Unit: mm 3.2 2.8 1.1±0.15 2.8Max. 9.0 15.0±0.3 0.75±0.25 12..

TK80D08K3_ToshibaSemiconductor.pdf

Preview of TK80D08K3 PDF
TK80D08K3 Datasheet Preview Page 2 TK80D08K3 Datasheet Preview Page 3

Datasheet Details

Part number:

TK80D08K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

198.83 KB

Description:

Switching regulator applications.

📁 Related Datasheet

TK8011 1 key touch detector (Tenx)

TK8012 2 key touch detector (Tenx)

TK8021 1 key touch detector (Tenx)

TK8022 2 key touch detector (Tenx)

TK8023 3 key touch detector (Tenx)

TK80A04K3L MOSFETs (Toshiba Semiconductor)

TK80A04K3L N-Channel MOSFET (INCHANGE)

TK80A08K3 Field Effect Transistor (Toshiba Semiconductor)

TAGS

TK80D08K3 TK80D08K3 Switching Regulator Applications Toshiba Semiconductor

TK80D08K3 Distributor