TK8A10K3 - Field Effect Transistor
TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
TK8A10K3 Features
* roduct for Unintended
