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TK8A10K3 Datasheet - Toshiba Semiconductor

TK8A10K3 Field Effect Transistor

TK8A10K3 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TK8A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1).

TK8A10K3 Features

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TK8A10K3-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK8A10K3

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

203.45 KB

Description:

Field effect transistor.

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TK8A10K3 TK8A10K3 Field Effect Transistor Toshiba Semiconductor

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