TK8A60W5 - Silicon N-Channel MOSFET
TK8A60W5 Features
* (1) (2) (3) (4) Fast reverse recovery time: trr = 80 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit 1: Gate 2
