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TK8A25DA Datasheet - Toshiba

TK8A25DA Silicon N-Channel MOSFET

TK8A25DA Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8A25DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum R

TK8A25DA_Toshiba.pdf

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Datasheet Details

Part number:

TK8A25DA

Manufacturer:

Toshiba ↗

File Size:

234.32 KB

Description:

Silicon n-channel mosfet.

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TK8A25DA TK8A25DA Silicon N-Channel MOSFET Toshiba

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