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TK8A25DA - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number: TK8A25DA
Manufacturer: Toshiba ↗
File Size: 234.32 KB
Datasheet: TK8A25DA_Toshiba.pdf
Description: Silicon N-Channel MOSFET

TK8A25DA Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8A25DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed.

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