TK8A60DA Datasheet - Toshiba Semiconductor

TK8A60DA Transistor

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain curr.

TK8A60DA Features

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TK8A60DA-ToshibaSemiconductor.pdf