TK8A50DA Datasheet - Toshiba Semiconductor

TK8A50DA N-Channel MOSFET

TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A50DA Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.76 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.1 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0.2 10 ± 0.3 A 3.9 3.0 Unit: mm 2.7 ± 0.2 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 Absolute M.

TK8A50DA Features

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TK8A50DA Datasheet (204.78 KB)