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TK8A45D

Silicon N-Channel MOSFET

TK8A45D Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.73 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.8 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8A45D 1: Gate (G) 2:

TK8A45D Datasheet (229.39 KB)

Preview of TK8A45D PDF

Datasheet Details

Part number:

TK8A45D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

229.39 KB

Description:

Silicon n-channel mosfet.

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TK8A45D Silicon N-Channel MOSFET Toshiba Semiconductor

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