* a programmable DLL opt
NDD36P
INSIGNIS
1.44 MB
16m x16 bit ddr synchonous dram.
256Mb (x16) - DDR Synchronous DRAM
16M x16 bit DDR Synchonous DRAM
Overview
The 256Mb DDR SDRAM is a high-speed CMOS double data rate synchronous DRA.
📁 Related Datasheet
NDD01N60 - N-Channel Power MOSFET
(ON Semiconductor)
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD01N60-1G - N-Channel Power MOSFET
(ON Semiconductor)
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD01N60T4G - N-Channel Power MOSFET
(ON Semiconductor)
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD02N40 - N-Channel Power MOSFET
(ON Semiconductor)
NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD02N60Z - N-Channel Power MOSFET
(ON Semiconductor)
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche T.
NDD03N40Z - N-Channel Power MOSFET
(ON Semiconductor)
NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET 400 V, 3.4 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized .
NDD03N50Z - N-Channel Power MOSFET
(ON Semiconductor)
NDD03N50Z
N-Channel Power MOSFET 500 V, 3.3 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • The.
NDD03N60Z - N-Channel Power MOSFET
(ON Semiconductor)
NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET 600 V, 3.6 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche T.
