NDD58P
INSIGNIS
1.47 MB
64m x 8 bit ddr synchronous dram.
512Mb (x16, x8) - DDR Synchronous DRAM
32M x 16 bit or 64M x 8 bit DDR Synchronous DRAM
Overview
The 512Mb DDR SDRAM is a high-speed CMOS double data .
📁 Related Datasheet
NDD56P - 32M x 16 bit DDR Synchronous DRAM
(INSIGNIS)
512Mb (x16, x8) - DDR Synchronous DRAM
32M x 16 bit or 64M x 8 bit DDR Synchronous DRAM
Overview
The 512Mb DDR SDRAM is a high-speed CMOS double data .
NDD57A - Diode/Diode Module
(Naina Semiconductor)
Naina Semiconductor Ltd.
Features
Diode/Diode Module, 60A
• Improved glass passivation for high reliability • Exceptional stability at high tempera.
NDD01N60 - N-Channel Power MOSFET
(ON Semiconductor)
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD01N60-1G - N-Channel Power MOSFET
(ON Semiconductor)
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD01N60T4G - N-Channel Power MOSFET
(ON Semiconductor)
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD02N40 - N-Channel Power MOSFET
(ON Semiconductor)
NDD02N40, NDT02N40
N-Channel Power MOSFET 400 V, 5.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro.
NDD02N60Z - N-Channel Power MOSFET
(ON Semiconductor)
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche T.
NDD03N40Z - N-Channel Power MOSFET
(ON Semiconductor)
NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET 400 V, 3.4 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized .
