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F-26
01/99
NJ72 Process
Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the NJ72 Process. Datasheet
IFN5564, IFN5565 IFN5566 J308, J309 J308, J309 J310
Datasheet
U308, U309 U430, U431 VCR2N
www.DataSheet4U.
NJ72 Datasheet
