IRFP9150 Datasheet (INTERSIL) - P-Channel Power MOSFET

IRFP9150, P-Channel Power MOSFET

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

It is a P-Channel enhancement mode silicon-gate power ﬁeld effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring hi

IRFP9150 Features

* 25A, 100V

* rDS(ON) = 0.150Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRFP9150