IRFP9140N Datasheet - IRF

IRFP9140N, Power MOSFET

PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFP9140N_IRF.pdf

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Datasheet Details

Part number:

IRFP9140N

Manufacturer:

IRF

File Size:

142.22 KB

Description:

Power MOSFET

Features

* 7) NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C . 2 .40 (.09 4) 2 .00 (.07 9) 2X 5.45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .4 0

Applications

* The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID

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