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IRFP9140N - Power MOSFET

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 7) NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C . 2 .40 (.09 4) 2 .00 (.07 9) 2X 5.45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .4 0 (.1 33 ) 3 .0 0 (.1 18 ) C A S 0 .80 (.03 1) 3X 0 .40 (.01 6) 2.60 (.1 0 2) 2.20 (.0 8 7) Part Marking Information TO-247AC E X A M P L E : TH IS IS A N IR F P E 3 0 W ITH A S S E M B L Y LOT CODE 3.

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Datasheet Details

Part number IRFP9140N
Manufacturer IRF
File Size 142.22 KB
Description Power MOSFET
Datasheet download datasheet IRFP9140N Datasheet
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Full PDF Text Transcription

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PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.117Ω G S ID = -23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.
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