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IRFP250NPBF Power MOSFET

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Description

PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRFP250NPBF
Manufacturer
IRF
File Size
202.19 KB
Datasheet
IRFP250NPBF-IRF.pdf
Description
Power MOSFET

Features

* -B- 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010)

Applications

* The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C I

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