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IRFP254N Power MOSFET

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Description

PD - 94213 IRFP254N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching F.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRFP254N
Manufacturer
IRF
File Size
222.26 KB
Datasheet
IRFP254N_IRF.pdf
Description
Power MOSFET

Features

* 0.25 (.010) M 3.40 (.133) 3.00 (.118) C A S 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN T HE ASS EMBLY LINE "H" PART NUMBER INT ERNAT IONAL RECT IF IER LOGO ASS EMBLY LO

Applications

* The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C I

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