IRFP254A
Inchange Semiconductor
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N-channel mosfet transistor.
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IRFP254 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
.
IRFP254 - Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
IRFP254
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
IRFP254 - Power MOSFET
(Vishay)
IRFP254, SiHFP254
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 140 24 .
IRFP254 - Power MOSFET
(IRF)
Free Datasheet http://..
Free Datasheet http://..
Free Datasheet http://..
Free Datasheet http:/.
IRFP254 - Standard Power MOSFET
(IXYS)
Standard Power MOSFET
IRFP 254
VDSS = 250 V ID (cont) = 23 A RDS(on) = 0.14 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EA.
IRFP254A - Power MOSFET
(Samsung)
)($785(6
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IRFP254B - 250V N-Channel MOSFET
(Fairchild)
IRFP254B
November 2001
IRFP254B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produc.
IRFP254N - Power MOSFET
(IRF)
PD - 94213
IRFP254N
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching F.
IRFP254N - Power MOSFET
(Vishay)
Power MOSFET
IRFP254N, SiHFP254N
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 .
IRFP250 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
iscN-Channel MOSFET Transistor
IRFP250
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
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