IRFP253 Datasheet, Transistor, Inchange Semiconductor

IRFP253 Features

• Transistor
• Drain Current
    –ID= 27A@ TC=25℃
• Drain Source Voltage- : VDSS= 150V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)
• Fast

PDF File Details

Part number:

IRFP253

Manufacturer:

Inchange Semiconductor

File Size:

236.41kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

IRFP253 Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Curre

TAGS

IRFP253

Inchange Semiconductor

📁 Related Datasheet

IRFP250 - N-Channel MOSFET Transistor (Inchange Semiconductor)
iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.

IRFP250 - N-Channel Power MOSFET (Fairchild)
Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transis.

IRFP250 - N-CHANNEL MOSFET (ST Microelectronics)
N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE IRFP250 s s s s s IRFP250 VDSS 200V RDS(on) < 0.085Ω ID 33 A TYPICAL RDS(on) = 0.07.

IRFP250 - Power MOSFET (Vishay)
.vishay. IRFP250 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 VGS = 10 V .

IRFP250 - Power MOSFET (International Rectifier)
.

IRFP250 - Power MOSFET (IXYS)
Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VG.

IRFP250A - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP250A FEATURES ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Vol.

IRFP250A - Advanced Power MOSFET (Fairchild)
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.

IRFP250B - 200V N-Channel MOSFET (Fairchild)
IRFP250B November 2001 IRFP250B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.

IRFP250M - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP250M，IIRFP250M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mo.