IRFP254B Datasheet (Fairchild) - 250V N-Channel MOSFET

IRFP254B, 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

IRFP254B Features

* 25A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! TO-3P G DS IRFP Series ! S Absolute Maximu