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IRFP250B - 200V N-Channel MOSFET

IRFP250B Description

IRFP250B November 2001 IRFP250B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFP250B Features

* 32A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! TO-3P G DS IRFP Series ! S Absolute Maxim

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Datasheet Details

Part number
IRFP250B
Manufacturer
Fairchild
File Size
669.63 KB
Datasheet
IRFP250B_Fairchild.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET Fairchild
Fairchild IRFP250B-like datasheet