Datasheet4U Logo Datasheet4U.com

IRFP251 - N-Channel MOSFET Transistor

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 33A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 150V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max).
  • Fast Switching.

📥 Download Datasheet

Datasheet preview – IRFP251

Datasheet Details

Part number IRFP251
Manufacturer Inchange Semiconductor
File Size 62.03 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet IRFP251 Datasheet
Additional preview pages of the IRFP251 datasheet.

📁 Similar Datasheet

  • IRFP251 - N-Channel Transistor (IRF)
  • IRFP250 - N-Channel Power MOSFET (Fairchild)
  • IRFP250 - N-CHANNEL MOSFET (ST Microelectronics)
  • IRFP250 - Power MOSFET (Vishay)
  • IRFP250 - Power MOSFET (International Rectifier)
  • IRFP250 - Power MOSFET (IXYS)
  • IRFP250A - Advanced Power MOSFET (Fairchild)
  • IRFP250B - 200V N-Channel MOSFET (Fairchild)
  • IRFP250M - N-Channel MOSFET (INCHANGE)
  • IRFP250MPbF - MOSFET (Infineon)
Other Datasheets by Inchange Semiconductor
  • IRFP250 - N-Channel MOSFET Transistor
  • IRFP250A - N-Channel MOSFET Transistor
  • IRFP250N - N-Channel MOSFET Transistor
  • IRFP252 - N-Channel MOSFET Transistor
  • IRFP253 - N-Channel MOSFET Transistor
  • IRFP254 - N-Channel MOSFET Transistor
  • IRFP254A - N-Channel MOSFET Transistor
  • IRFP255 - N-Channel MOSFET Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP251 FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 150 ±20 V V ID Drain Current-Continuous 33 A IDM Drain Current-Single Pluse 130 A PD Total Dissipation @TC=25℃ 180 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
Published: |