IRFP90N20D Datasheet - IRF

IRFP90N20D Power MOSFET

PD - 94301A SMPS MOSFET IRFP90N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.023Ω ID 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Curre.

IRFP90N20D Features

* tation current is 90A.

* ISD ≤ 56A, di/dt ≤ 470A/µs, VDD ≤ V(BR)DSS, Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St.,

IRFP90N20D Datasheet (89.17 KB)