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IRFP250N Power MOSFET

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Description

PD - 95007A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Par.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRFP250N
Manufacturer
IRF
File Size
189.56 KB
Datasheet
IRFP250N_IRF.pdf
Description
Power MOSFET

Applications

* The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC =

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