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IRHM7264SE Datasheet - IRF

IRHM7264SE N-Channel Transistor

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1393A REPETITIVE AVALANCHE AND dv/dt RATED IRHM7264SE N-CHANNEL HEXFET® TRANSISTOR SINGLE EVENT EFFECT (SEE) RAD HARD 250 Volt, 0.087Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up.

IRHM7264SE Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHM7264SE_IRF.pdf

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Datasheet Details

Part number:

IRHM7264SE

Manufacturer:

IRF

File Size:

121.74 KB

Description:

N-channel transistor.

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IRHM7264SE IRHM7264SE N-Channel Transistor IRF

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