IRHM7264SE - N-Channel Transistor
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PD-9.1393A REPETITIVE AVALANCHE AND dv/dt RATED IRHM7264SE N-CHANNEL HEXFET® TRANSISTOR SINGLE EVENT EFFECT (SEE) RAD HARD 250 Volt, 0.087Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up
IRHM7264SE Features
* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating
