IS35MW01G164 Datasheet - ISSI

IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY

The IS34/35MW1G084/164 are 128Mx8/64Mx16 bit with spare 4Mx8/2Mx16 bit capacity. The devices are offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it.

IS35MW01G164 Features

* Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 128Mb x8 /64Mb x16 - X8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - Memory Cell Array: (64M + 2M) x 16bit

IS35MW01G164 Datasheet (2.40 MB)