Datasheet4U Logo Datasheet4U.com

IS35MW04G164 - 4Gb(x8/x16) 1.8V NAND FLASH MEMORY

Download the IS35MW04G164 datasheet PDF (IS34MW04G084 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4gb(x8/x16) 1.8v nand flash memory.

Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 45ns.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS34MW04G084-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • IS354 - PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS (ISOCOM)
  • IS354A - PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS (ISOCOM)
  • IS357 - TRANSISTOR OPTOCOUPLERS (ETC)
  • IS357 - TRANSISTOR OPTOCOUPLERS (ISOCOM)
  • IS357A - HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS (ETC)
  • IS357A - HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS (ISOCOM)
  • IS3020 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
  • IS3021 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
  • IS3022 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
  • IS3051 - Photocoupler (ISOCOM)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
IS34MW04G084/164 IS35MW04G084/164 4Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G084/164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.
Published: |