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IS35MW01G084 Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS35MW01G084 datasheet preview

Datasheet Details

Part number IS35MW01G084
Datasheet IS35MW01G084 IS34MW01G084 Datasheet (PDF)
File Size 2.40 MB
Manufacturer ISSI (now Infineon)
Description 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW01G084 page 2 IS35MW01G084 page 3

IS35MW01G084 Overview

The IS34/35MW1G084/164 are 128Mx8/64Mx16 bit with spare 4Mx8/2Mx16 bit capacity. The devices are offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

IS35MW01G084 Key Features

  • Flexible & Efficient Memory Architecture
  • Memory Cell: 1bit/Memory Cell
  • Organization: 128Mb x8 /64Mb x16
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K + 64) x 8bit
  • Page Size: (2K + 64) Byte
  • Block Erase: (128K + 4K) Byte
  • Memory Cell Array: (64M + 2M) x 16bit
  • Data Register: (1K + 32) x 16bit
  • Page Size: (1K + 32) Word
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS35MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW02G164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW04G084 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW04G088 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS35MW04G164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS35MW04G168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS35ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY
IS35ML01G084 1Gb(x8) 3.3V NAND FLASH MEMORY
IS35ML02G084 2Gb(x8) 3.3V NAND FLASH MEMORY

IS35MW01G084 Distributor

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