Datasheet4U Logo Datasheet4U.com

IS43TR16256B - 4Gb DDR3 SDRAM

Download the IS43TR16256B datasheet PDF. This datasheet also covers the IS46TR16256B variant, as both devices belong to the same 4gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

- JEDEC Standard Sy

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 1066 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46TR16256B-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS431 (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR Sharp Electrionic Components
IS432 (IS431 / IS432) TOTEM POLE OUTPUT TYPE OPIC LIGHT DETECTOR Sharp Electrionic Components
IS435 BUILT IN AMP TYPE LIGHT DETECTOR Sharp Electrionic Components
IS436 BUILT IN AMP TYPE LIGHT DETECTOR Sharp Electrionic Components
IS437 (IS437 / IS438) TYPE OPIC LIGHT DETECTOR Sharp Electrionic Components

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS43TR16256BL 4Gb DDR3 SDRAM
IS43TR16256A 4Gb DDR3 SDRAM
IS43TR16256AL 4Gb DDR3 SDRAM
IS43TR16256EC 4Gb DDR3 SDRAM
IS43TR16256ECL 4Gb DDR3 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46TR16256B, IS43/46TR16256BL, IS43/46TR85120B, IS43/46TR85120BL 512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.
Published: |