DESC29-06AC Datasheet (IXYS Corporation) - HiPerFRED Epitaxial Diode

DESC29-06AC, HiPerFRED Epitaxial Diode

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEC29-06AC HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 2x15 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type ISOPLUS220TM 1 1 2 3 2 3 Isolated back surface Patent pending DSEC29-06AC Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH

DESC29-06AC Features

* l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 95 2500 1165 / 2.411 3 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (