IRFP260 Datasheet - IXYS Corporation

IRFP260 - Standard Power MOSFET

www.DataSheet4U.com Standard Power MOSFET N-Channel Enhancement Mode IRFP 260 VDSS ID (cont) RDS(on) = 200 V = 46 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ TJ = 25°C to 150°C = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 200 ±20 ±30 46 184 46 V V V V A A A mJ V/ns W °C °C °C TO-247 AD Continuous Transient TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C D (TAB) 28 5 280 -55 +150 150 -55 +150 G = Gate, S = Source.

IRFP260 Features

* International standard package JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* High commutating dv/dt rating

* Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s ww w.

IRFP260_IXYSCorporation.pdf